Chin. J. Semicond. > 2003, Volume 24 > Issue 10 > 1057-1062
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周期顺序蒸发工艺生长的Cu(In,Ga)Se_2薄膜结构

徐传明1093 , 许小亮 , 闵海军 , 徐军 , 杨晓杰 , 黄文浩 and 刘洪图

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Key words: CIGS, 有序缺陷化合物, 择优生长, 表面自发分解

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    Received: 20 August 2015 Revised: Online: Published: 01 October 2003

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      Article Navigation >  Journal of Semiconductors  > 2003  >  24(10): 1057-1062
      徐传明1093, 许小亮, 闵海军, 徐军, 杨晓杰, 黄文浩, 刘洪图. 周期顺序蒸发工艺生长的Cu(In,Ga)Se_2薄膜结构[J]. 半导体学报(英文版), 2003, 24(10): 1057-1062.
      Citation:
      徐传明1093, 许小亮, 闵海军, 徐军, 杨晓杰, 黄文浩, 刘洪图. 周期顺序蒸发工艺生长的Cu(In,Ga)Se_2薄膜结构[J]. 半导体学报(英文版), 2003, 24(10): 1057-1062.
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      • Received Date: 2015-08-20

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