| Citation: |
Lin Guoqiang, Zeng Yiping, Wang Xiaoliang, Liu Hongxin. Effect of a Metal Buffer Layer on GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia[J]. Journal of Semiconductors, 2008, 29(10): 1998-2002.
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Lin G Q, Zeng Y P, Wang X L, Liu H X. Effect of a Metal Buffer Layer on GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia[J]. J. Semicond., 2008, 29(10): 1998.
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Effect of a Metal Buffer Layer on GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia
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Abstract
Au/Cr and Au/Ti/Al/Ti metal buffer layers were respectively deposited on Si(111) substrate by electron beam evaporation,and GaN was grown on these metal films by gas source molecular beam epitaxy(GSMBE).The as-deposited metal films have a flat and featureless surface and show diffraction peaks of (111)-oriented cubic Au.The GaN grown on Au/Cr/Si(111) breaks off when cooled to room temperature.GaN grown on Au/Ti/Al/Ti/Si(111) without an AlN buffer layer was amorphous.By adding an AlN buffer,GaN grown on AlN/Au/Ti/Al/Ti/Si(111) shows diffraction peaks of (0001)-oriented hexagonal GaN.After annealing at 800℃ for 20min,the metal films of Au/Ti/Al/Ti/Si(111) became amorphous and convert to a porous metal network.-
Keywords:
- GaN,
- MBE,
- Si(111),
- buffer layer,
- metal
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References
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Proportional views
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