Chin. J. Semicond. > 1985, Volume 6 > Issue 6 > 563-575

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强磁场下n型InSb杂质带及其电导的理论

黄敏 , 韩汝琦 and 甘子钊

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    Received: 20 August 2015 Revised: Online: Published: 01 June 1985

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      Article Navigation >  Journal of Semiconductors  > 1985  >  6(6): 563-575
      黄敏, 韩汝琦, 甘子钊. 强磁场下n型InSb杂质带及其电导的理论[J]. 半导体学报(英文版), 1985, 6(6): 563-575.
      Citation:
      黄敏, 韩汝琦, 甘子钊. 强磁场下n型InSb杂质带及其电导的理论[J]. 半导体学报(英文版), 1985, 6(6): 563-575.
      shu

      • Received Date: 2015-08-20

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