Chin. J. Semicond. > 1999, Volume 20 > Issue 3 > 214-218
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High Temperature 1.3μm AlGaInAs/InP Strained Multiquantum Well Laser Grown by Metalorganic Vapor Phase Epitaxy

Bo Chen(陈博) , Xiaojie Wang(汪孝杰) and Wei Wang(王圩)

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Abstract:

We have investigated the AlGaInA/InP compressively strained layer separate confinement heterostructure multiquantum well (SCH-MQW) laser structure, which was grown by Low-Pressure Metalorganic Vapor phase Epitaxy. The T0 of AlGaInA/InP SCH-MQW buried-heterostructure lasers was up to 110K at temperatures between 20℃ and 60℃. The drop of slope efficiencies was only 0.54dB at temperatures between 20℃ and 80℃.

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    Received: 20 August 2015 Revised: Online: Published: 01 March 1999

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      Article Navigation >  Journal of Semiconductors  > 1999  >  20(3): 214-218
      Bo Chen(陈博), Xiaojie Wang(汪孝杰), Wei Wang(王圩). High Temperature 1.3μm AlGaInAs/InP Strained Multiquantum Well Laser Grown by Metalorganic Vapor Phase Epitaxy[J]. 半导体学报(英文版), 1999, 20(3): 214-218.
      Citation:
      Bo Chen(陈博), Xiaojie Wang(汪孝杰), Wei Wang(王圩). High Temperature 1.3μm AlGaInAs/InP Strained Multiquantum Well Laser Grown by Metalorganic Vapor Phase Epitaxy[J]. 半导体学报(英文版), 1999, 20(3): 214-218.
      shu

      • Received Date: 2015-08-20

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