Chin. J. Semicond. > 1995, Volume 16 > Issue 3 > 182-187
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MBE生长的p－Hg_（1－x）Cd_xTe外延薄膜变磁场下的Hall系数及电导率

杜庆红，何力，袁诗鑫

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    Received: 19 August 2015 Revised: Online: Published: 01 March 1995

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      Article Navigation >  Journal of Semiconductors  > 1995  >  16(3): 182-187
      杜庆红，何力，袁诗鑫. MBE生长的p－Hg_（1－x）Cd_xTe外延薄膜变磁场下的Hall系数及电导率[J]. 半导体学报(英文版), 1995, 16(3): 182-187.
      Citation:
      杜庆红，何力，袁诗鑫. MBE生长的p－Hg_（1－x）Cd_xTe外延薄膜变磁场下的Hall系数及电导率[J]. 半导体学报(英文版), 1995, 16(3): 182-187.
      shu

      • Received Date: 2015-08-19

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