| Citation: |
Liu Beiping, Li Xiaoliang, Zhu Haibo. Cl2-Based Dry Etching of GaN Using Inductively Coupled Plasma[J]. Journal of Semiconductors, 2006, 27(7): 1335-1338.
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Liu B P, Li X L, Zhu H B. Cl2-Based Dry Etching of GaN Using Inductively Coupled Plasma[J]. Chin. J. Semicond., 2006, 27(7): 1335.
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Cl2-Based Dry Etching of GaN Using Inductively Coupled Plasma
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Abstract
Inductively coupled plasma (ICP) etching of GaN is carried out with Cl2/He and Cl2/Ar.The effects of ICP power,DC bias,total flow rate,and Cl2∶He ratio on the etch rate and surface morphology are discussed when etching GaN using Cl2/He.Experimental results indicate that the etching rate is very high,and the maximum reaches 420nm/min.The etched surface is very smooth,with an RMS less than 1nm.An SEM photo shows a smooth etched surface and vertical sidewall.The difference between Cl2/He and Cl2/Ar etching under the same conditions,including etch rate,surface morphology,and the ρc of the n-type contact on the etched surface,is investigated -
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