Chin. J. Semicond. > 1983, Volume 4 > Issue 5 > 507-509
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剥层椭偏法对As~+注入Si热退火过程的进一步研究

陈敏麒 , 张宏 and 罗晋生

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    Received: 20 August 2015 Revised: Online: Published: 01 May 1983

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      Article Navigation >  Journal of Semiconductors  > 1983  >  4(5): 507-509
      陈敏麒, 张宏, 罗晋生. 剥层椭偏法对As~+注入Si热退火过程的进一步研究[J]. 半导体学报(英文版), 1983, 4(5): 507-509.
      Citation:
      陈敏麒, 张宏, 罗晋生. 剥层椭偏法对As~+注入Si热退火过程的进一步研究[J]. 半导体学报(英文版), 1983, 4(5): 507-509.
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      • Received Date: 2015-08-20

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