Chin. J. Semicond. > 2001, Volume 22 > Issue 11 > 1468-1473
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MOS器件的质子总剂量效应

王桂珍 , 张正选 , 姜景和 , 罗尹红 , 彭宏论 and 何宝平

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Key words: 总剂量效应, 质子, Faraday筒, 阈值电压, 漏电流

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    Received: 20 August 2015 Revised: Online: Published: 01 November 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(11): 1468-1473
      王桂珍, 张正选, 姜景和, 罗尹红, 彭宏论, 何宝平. MOS器件的质子总剂量效应[J]. 半导体学报(英文版), 2001, 22(11): 1468-1473.
      Citation:
      王桂珍, 张正选, 姜景和, 罗尹红, 彭宏论, 何宝平. MOS器件的质子总剂量效应[J]. 半导体学报(英文版), 2001, 22(11): 1468-1473.
      shu

      • Received Date: 2015-08-20

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