PAPERS
Abstract: A wideband low noise amplifier (LNA) MMIC was designed and fabricated with 0.15μm GaAs pHEMT process.It obtains high gain by means of adopting four stages topology.The chip size is 2mm×1mm.Covering 45~65GHz,it achieves a maximum 20.5dB gain and low VSWR.It has the advantages of higher gain,wider bandwidth and lower power consuming.This chip can be widely applied in 60GHz wideband wireless communication system.
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A 1.8-3 GHz-band high efficiency GaAs pHEMT power amplifier MMIC Qin Ge, Hongqi Tao, Xuming Yu Journal of Semiconductors, 2015, 36(12): 125003. doi: 10.1088/1674-4926/36/12/125003 |
| 2 |
A 0.75 dB NF LNA in GaAs pHEMT utilizing gate-drain capacitance and gradual inductor Shuo Wang, Xinnian Zheng, Hao Yang, Haiying Zhang Journal of Semiconductors, 2015, 36(7): 075001. doi: 10.1088/1674-4926/36/7/075001 |
| 3 |
A low power 2.5-5 GHz low-noise amplifier using 0.5-μm GaAs pHEMT technology Peng Yangyang, Lu Kejie, Sui Wenquan Journal of Semiconductors, 2012, 33(10): 105001. doi: 10.1088/1674-4926/33/10/105001 |
| 4 |
Design and optimization of CMOS LNA with ESD protection for 2.4 GHz WSN application Li Zhiqun, Chen Liang, Zhang Hao Journal of Semiconductors, 2011, 32(10): 105004. doi: 10.1088/1674-4926/32/10/105004 |
| 5 |
A 50 MHz–1 GHz high linearity CATV amplifier with a 0.15 μm InGaAs PHEMT process Xu Jian, Wang Zhigong, Zhang Ying, Huang Jing Journal of Semiconductors, 2011, 32(7): 075002. doi: 10.1088/1674-4926/32/7/075002 |
| 6 |
Yao Xiaojiang, Pu Yan, Liu Xinyu, Wu Weichao Journal of Semiconductors, 2008, 29(7): 1246-1248. |
| 7 |
MMIC-Based RF On-Chip LC Passive Filters Wu Rui, Liao Xiaoping, Zhang Zhiqiang Journal of Semiconductors, 2008, 29(12): 2437-2442. |
| 8 |
A 12~18GHz Wide Band VCO Based on Quasi-MMIC Wang Shaodong, Gao Xuebang, Wu Hongjiang, Wang Xiangwei, Mo Lidong, et al. Journal of Semiconductors, 2008, 29(1): 63-68. |
| 9 |
1.0μm Gate-Length GaAs MHEMT Devices and SPDT Switch MMICs Xu Jingbo, Li Ming, Zhang Haiying, Wang Wenxin, Yin Junjian, et al. Journal of Semiconductors, 2008, 29(4): 668-671. |
| 10 |
X Band MMIC Power Amplifier Based on InGaP/GaAs HBT Chen Yanhu, Shen Huajun, Wang Xiantai, Ge Ji, Li Bin, et al. Chinese Journal of Semiconductors , 2007, 28(5): 759-762. |
| 11 |
A Ka-Band PHEMT MMIC 1W Power Amplifier Yu Mengxia, Li Aibin, Xu Jun Chinese Journal of Semiconductors , 2007, 28(10): 1513-1517. |
| 12 |
Analysis and Design of 10Gb/s,0.2μm GaAs PHEMTTrans-Impedance Amplifiers Cai Shuicheng, Wang Zhigong, Gao Jianjun, Zhu En Chinese Journal of Semiconductors , 2006, 27(10): 1808-1813. |
| 13 |
Passive Component Models for GaAs MMICs Shen Huajun, Chen Yanhu, Yan Beiping, Yang Wei, Ge Ji, et al. Chinese Journal of Semiconductors , 2006, 27(10): 1872-1879. |
| 14 |
Zhong Shichang, Chen Tangsheng Chinese Journal of Semiconductors , 2006, 27(10): 1804-1807. |
| 15 |
K-Band Monolithic Low Noise Amplifier with High Gain Wang Chuang, Qian Rong, Sun Xiaowei Chinese Journal of Semiconductors , 2006, 27(7): 1285-1289. |
| 16 |
32GHz MMIC Power Amplifier Using 0.25μm GaAs PHEMT Gu Jianzhong, Zhang Jian, Yu Xiaojing, Qian Rong, Li Lingyun, et al. Chinese Journal of Semiconductors , 2006, 27(12): 2160-2162. |
| 17 |
An X-Band PHEMT MMIC Power Amplifier Zhang Shujing, Yang Ruixia, Wu Jibin, Yang Kewu Chinese Journal of Semiconductors , 2006, 27(10): 1800-1803. |
| 18 |
A Compact Ka-Band PHEMT MMIC Voltage Controlled Oscillator Chinese Journal of Semiconductors , 2005, 26(6): 1111-1115. |
| 19 |
A GaAs PHEMT Laser/Modulator Driver for 24 Gb/s Optical Transmitters Li Wenyuan, Wang Zhigong Chinese Journal of Semiconductors , 2005, 26(12): 2455-2459. |
| 20 |
Wu Ahui Chinese Journal of Semiconductors , 2005, 26(S1): 252-255. |
Article views: 3690 Times PDF downloads: 1677 Times Cited by: 0 Times
Received: 18 August 2015 Revised: 18 February 2008 Online: Published: 01 July 2008
| Citation: |
Hou Yang, Zhang Jian, Li Lingyun, Sun Xiaowei. 60GHz Wideband LNA MMIC with High Gain[J]. Journal of Semiconductors, 2008, 29(7): 1373-1376.
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Hou Y, Zhang J, Li L Y, Sun X W. 60GHz Wideband LNA MMIC with High Gain[J]. J. Semicond., 2008, 29(7): 1373.
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