Abstract: Compensated material Si∶(B,Mn) is prepared by high temperature diffusion.The relation between the current oscillation parameters of this material and light intensity and electric field is studied.The experiment shows that:(1) In certain light intensity and electric field ranges (145～305V/cm) the material Si∶(B,Mn) with a resistivity of 1E4Ω·cm exhibits a current oscillation phenomenon at liquid nitrogen temperature;(2) At a certain electric field,the waveform of the current oscillation is stable and does not change with time;(3) The dependence relation between the oscillation frequency and light-intensity can be expressed by f=f0(L/L0)α where L0 is the minimum light-intensity needed to stimulate oscillation,f0 is the frequency under L0,L is the intensity of the light,and α is a coefficient that increase with electric field;(4) The modulating coefficient K (K=(Imax-Imin)/Imax) decreases as the light increases;(5) The maximum value of the oscillation Imax decreases with the increase of the light-intensity while the minimum value of oscillation Imin increases slowly.

Key words: silicon, diffusion, compensation, current oscillation