| Citation: |
Yu Zongguang, Liu Zhan, Wang Guozhang, Xu Ziming. An ADI Method for the Breakdown Voltage Analysis of Thin-Film SOI RESURF Structure with the High-Order Compact Finite Difference[J]. Journal of Semiconductors, 2006, 27(2): 354-357.
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Yu Z G, Liu Z, Wang G Z, Xu Z M. An ADI Method for the Breakdown Voltage Analysis of Thin-Film SOI RESURF Structure with the High-Order Compact Finite Difference[J]. Chin. J. Semicond., 2006, 27(2): 354.
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An ADI Method for the Breakdown Voltage Analysis of Thin-Film SOI RESURF Structure with the High-Order Compact Finite Difference
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Abstract
The application of ADI and high-order compact finite difference method to the breakdown voltage analysis of thin film SOI RESURF structure.Numerical results present that this method can decrease the number of iterative by 40% and reduce the computation time greatly.-
Keywords:
- ADI,
- high-order compact finite difference,
- SOI,
- RESURF,
- breakdown voltage
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References
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Proportional views
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