Chin. J. Semicond. > 1981, Volume 2 > Issue 1 > 78-80
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SiCl_4/SiH_4-NH_3体系的低压化学蒸汽淀积(LPCVD)氮化硅薄膜研究

王季陶 , 承焕生 , 吴宪平 and 吕以金

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    Received: 20 August 2015 Revised: Online: Published: 01 January 1981

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      Article Navigation >  Journal of Semiconductors  > 1981  >  2(1): 78-80
      王季陶, 承焕生, 吴宪平, 吕以金. SiCl_4/SiH_4-NH_3体系的低压化学蒸汽淀积(LPCVD)氮化硅薄膜研究[J]. 半导体学报(英文版), 1981, 2(1): 78-80.
      Citation:
      王季陶, 承焕生, 吴宪平, 吕以金. SiCl_4/SiH_4-NH_3体系的低压化学蒸汽淀积(LPCVD)氮化硅薄膜研究[J]. 半导体学报(英文版), 1981, 2(1): 78-80.
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      • Received Date: 2015-08-20

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