| Citation: |
Jing Xiaocheng, Yao Ruohe, Lin Yushu. Magnetic Field Optimization of a Reactive Ion Etching Device with Magnetic Containment[J]. Journal of Semiconductors, 2006, 27(S1): 422-425.
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Jing X C, Yao R H, Lin Y S. Magnetic Field Optimization of a Reactive Ion Etching Device with Magnetic Containment[J]. Chin. J. Semicond., 2006, 27(13): 422.
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Magnetic Field Optimization of a Reactive Ion Etching Device with Magnetic Containment
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Abstract
The FEM (finite element mothod) is used for building the magnetic field model in the MERIE (magnetically enhanced reactive ion etcher) apparatus. Investigation reveals that the value and distribution of the magnetic field can be optimized using proper configuration of the magnetic poles and adjust of the magnetization direction,then the best process can be achieved by improving dry etching uniformity as well as the etching rate.-
Keywords:
- reactive ion etching,
- magnetic containment,
- plasma reactor
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References
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Proportional views
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