Chin. J. Semicond. > 1994, Volume 15 > Issue 3 > 217-222

Determination　of　Interstitial　Oxygen　Concentration　in　Heavily　Doped　Silicon　by　Combination　of　Neutron　Irradiation　and　FTIR

Ma Zhenyu , Wang Qiyuan , Zan Yude , Cai Tianhai , Yu Yuanhuan and Lin Lanying

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Received: 18 August 2015 Revised: Online: Published: 01 March 1994

Article Navigation > Journal of Semiconductors > 1994 > 15(3): 217-222

Ma Zhenyu, Wang Qiyuan, Zan Yude, Cai Tianhai, Yu Yuanhuan, Lin Lanying. Determination　of　Interstitial　Oxygen　Concentration　in　Heavily　Doped　Silicon　by　Combination　of　Neutron　Irradiation　and　FTIR[J]. 半导体学报(英文版), 1994, 15(3): 217-222.

Citation:

Ma Zhenyu, Wang Qiyuan, Zan Yude, Cai Tianhai, Yu Yuanhuan, Lin Lanying. Determination　of　Interstitial　Oxygen　Concentration　in　Heavily　Doped　Silicon　by　Combination　of　Neutron　Irradiation　and　FTIR[J]. 半导体学报(英文版), 1994, 15(3): 217-222.

Ma Zhenyu, Wang Qiyuan, Zan Yude, Cai Tianhai, Yu Yuanhuan, Lin Lanying. Determination　of　Interstitial　Oxygen　Concentration　in　Heavily　Doped　Silicon　by　Combination　of　Neutron　Irradiation　and　FTIR[J]. 半导体学报(英文版), 1994, 15(3): 217-222.

Citation:

Ma Zhenyu, Wang Qiyuan, Zan Yude, Cai Tianhai, Yu Yuanhuan, Lin Lanying. Determination　of　Interstitial　Oxygen　Concentration　in　Heavily　Doped　Silicon　by　Combination　of　Neutron　Irradiation　and　FTIR[J]. 半导体学报(英文版), 1994, 15(3): 217-222.

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