Chin. J. Semicond. > 2002, Volume 23 > Issue 1 > 65-69
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沟道热载流子导致的SOI NMOSFET's的退化特性

刘红侠 , 郝跃 and 朱建纲

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Key words: SOI NMOSFET's, 沟道热载流子, 退化, 阈值电压, 寄生双极晶体管(PBT)

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    Received: 19 August 2015 Revised: Online: Published: 01 January 2002

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      Article Navigation >  Journal of Semiconductors  > 2002  >  23(1): 65-69
      刘红侠, 郝跃, 朱建纲. 沟道热载流子导致的SOI NMOSFET's的退化特性[J]. 半导体学报(英文版), 2002, 23(1): 65-69.
      Citation:
      刘红侠, 郝跃, 朱建纲. 沟道热载流子导致的SOI NMOSFET's的退化特性[J]. 半导体学报(英文版), 2002, 23(1): 65-69.
      shu

      • Received Date: 2015-08-19

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