| Citation: |
Jie Binbin, Sah Chih-Tang. The Bipolar Field-Effect Transistor:V.Bipolar Electrochemical Current Theory(Two-MOS-Gates on Thin-Base)[J]. Journal of Semiconductors, 2008, 29(4): 620-627.
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Jie B B, Sah C. The Bipolar Field-Effect Transistor:V.Bipolar Electrochemical Current Theory(Two-MOS-Gates on Thin-Base)[J]. J. Semicond., 2008, 29(4): 620.
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The Bipolar Field-Effect Transistor:V.Bipolar Electrochemical Current Theory(Two-MOS-Gates on Thin-Base)
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Abstract
This paper reports the intrinsic-structure DC characteristics computed from the analytical electrochemical current theory of the bipolar field-effect transistor (BiFET) with two identical MOS gates on nanometer-thick pure-base of silicon with no generation-recombination-trapping.Numerical solutions are rapidly obtained for the three potential variables,electrostatic and electron and hole electrochemical potentials,to give the electron and hole surface and volume channel currents,using our cross-link two-route or zig-zag one-route recursive iteration algorithms. Boundary conditions on the three potentials dominantly affect the intrinsic-structure DC characteristics,illustrated by examples covering 20-decades of current (10E-22 to 10E-2 A/Square at 400cm2/ (V·s) mobility for 1.5nm gate-oxide,and 30nm-thick pure-base). Aside from the domination of carrier space-charge-limited drift current in the strong surface channels,observed in the theory is also the classical drift current saturation due to physical pinch-off of an impure-base volume channel depicted by the 1952 Shockley junction-gate field-effect transistor theory,and its extension to complete cut-off of the pure-base volume channel,due to vanishing carrier screening by the few electron and hole carriers in the pure-base,with Debye length (25mm) much larger than device dimension (25nm). -
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