Chin. J. Semicond. > 1990, Volume 11 > Issue 8 > 623-626
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半绝缘InP中Si~++P~+双注入的电学特性

沈鸿烈 , 杨根庆 , 周祖尧 and 邹世昌

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    Received: 19 August 2015 Revised: Online: Published: 01 August 1990

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      Article Navigation >  Journal of Semiconductors  > 1990  >  11(8): 623-626
      沈鸿烈, 杨根庆, 周祖尧, 邹世昌. 半绝缘InP中Si~++P~+双注入的电学特性[J]. 半导体学报(英文版), 1990, 11(8): 623-626.
      Citation:
      沈鸿烈, 杨根庆, 周祖尧, 邹世昌. 半绝缘InP中Si~++P~+双注入的电学特性[J]. 半导体学报(英文版), 1990, 11(8): 623-626.
      shu

      • Received Date: 2015-08-19

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