Chin. J. Semicond. > 2003, Volume 24 > Issue 8 > 833-836
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高阻值Cd_(1-x)Zn_xTe晶体的生长及其性能测试

李国强 , 谷智 and 介万奇

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Key words: Cd1-xZnxTe, 布里奇曼法, 电阻率, 红外透过率, 结晶质量

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    Received: 20 August 2015 Revised: Online: Published: 01 August 2003

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      Article Navigation >  Journal of Semiconductors  > 2003  >  24(8): 833-836
      李国强, 谷智, 介万奇. 高阻值Cd_(1-x)Zn_xTe晶体的生长及其性能测试[J]. 半导体学报(英文版), 2003, 24(8): 833-836.
      Citation:
      李国强, 谷智, 介万奇. 高阻值Cd_(1-x)Zn_xTe晶体的生长及其性能测试[J]. 半导体学报(英文版), 2003, 24(8): 833-836.
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      • Received Date: 2015-08-20

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