Fabrication and Simulation of an AlGaAs/GaAs Ultra-Thin Base NDR HBT

Qi Haitao , Zhang Shilin , Guo Weilian , Liang Huilai and and Mao Luhong

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Key words: HBT, ultra-thin base, device simulation, voltage-controlled NDR, PVCR

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Received: 18 August 2015 Revised: Online: Published: 01 August 2005

Article Navigation > Journal of Semiconductors > 2005 > 26(8): 1495-1499

Qi Haitao, Zhang Shilin, Guo Weilian, Liang Huilai, and Mao Luhong. Fabrication and Simulation of an AlGaAs/GaAs Ultra-Thin Base NDR HBT[J]. 半导体学报(英文版), 2005, 26(8): 1495-1499.

Citation:

Qi Haitao, Zhang Shilin, Guo Weilian, Liang Huilai, and Mao Luhong. Fabrication and Simulation of an AlGaAs/GaAs Ultra-Thin Base NDR HBT[J]. 半导体学报(英文版), 2005, 26(8): 1495-1499.

Qi Haitao, Zhang Shilin, Guo Weilian, Liang Huilai, and Mao Luhong. Fabrication and Simulation of an AlGaAs/GaAs Ultra-Thin Base NDR HBT[J]. 半导体学报(英文版), 2005, 26(8): 1495-1499.

Citation:

Qi Haitao, Zhang Shilin, Guo Weilian, Liang Huilai, and Mao Luhong. Fabrication and Simulation of an AlGaAs/GaAs Ultra-Thin Base NDR HBT[J]. 半导体学报(英文版), 2005, 26(8): 1495-1499.

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