Chin. J. Semicond. > 1986, Volume 7 > Issue 1 > 78-84
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中子辐照氢气区熔硅单晶退火行为的正电子湮没研究

熊兴民

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    Received: 20 August 2015 Revised: Online: Published: 01 January 1986

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      Article Navigation >  Journal of Semiconductors  > 1986  >  7(1): 78-84
      熊兴民. 中子辐照氢气区熔硅单晶退火行为的正电子湮没研究[J]. 半导体学报(英文版), 1986, 7(1): 78-84.
      Citation:
      熊兴民. 中子辐照氢气区熔硅单晶退火行为的正电子湮没研究[J]. 半导体学报(英文版), 1986, 7(1): 78-84.
      shu

      • Received Date: 2015-08-20

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