Etching Process of Back-Illuminated ZnO Ultraviolet Focal Plane Array Imagers

Gao Qun; Zhang Jingwen; Hou Xun

J. Semicond. > 2008, Volume 29 > Issue 12 > 2304-2306

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Etching Process of Back-Illuminated ZnO Ultraviolet Focal Plane Array Imagers

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Abstract: Etching process of back-illuminated ZnO ultraviolet focal plane array imagers was investigated.The etching result of 128×128 array,in which the area of unit cell was 25μm×25μm,was studied.The profile angle was approximately 80°. There was a linear relationship between the etching depth and the etching time.The dependence of etching rate on NH4Cl solution concentration was also studied.The photoresponsivity of the array's unit cells was measured.The UV-to-visible rejection ratio was around 60∶1.

Key words: etching, NH4Cl, focal plane array

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Gao Qun, Zhang Jingwen, Hou Xun. Etching Process of Back-Illuminated ZnO Ultraviolet Focal Plane Array Imagers[J]. Journal of Semiconductors, 2008, 29(12): 2304-2306.

Gao Q, Zhang J W, Hou X. Etching Process of Back-Illuminated ZnO Ultraviolet Focal Plane Array Imagers[J]. J. Semicond., 2008, 29(12): 2304.

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Received: 18 August 2015 Revised: 08 July 2008 Online: Published: 01 December 2008

Etching process of back-illuminated ZnO ultraviolet focal plane array imagers was investigated.The etching result of 128×128 array,in which the area of unit cell was 25μm×25μm,was studied.The profile angle was approximately 80°. There was a linear relationship between the etching depth and the etching time.The dependence of etching rate on NH4Cl solution concentration was also studied.The photoresponsivity of the array's unit cells was measured.The UV-to-visible rejection ratio was around 60∶1.

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