Chin. J. Semicond. > 2007, Volume 28 > Issue 6 > 913-917

PAPERS

Influence of Wall Properties on Wall Temperature of a Radial Flow MOCVD Reactor with Three Separate Vertical Inlets

Liu Yong, Nie Yuhong and Yao Shouguang

+ Author Affiliations

PDF

Abstract: Quartz is widely used as the wall of MOCVD reactors.We compared numerical simulations performed by six different models of the quartz emissivity,transmissivity and reflectivity.The models include the transparent-body model,a black body model,a gray body model,a three-band specular reflective model,a three-band diffusive reflective model,and a two-band model.These models are combined with the zone method to simulate wall temperature distribution in the MOCVD reactor with three separate vertical inlets.Results show that the temperature distributions of a quartz wall are largely influenced by the wall properties,in which the wall emissivity is the largest,and the wall transmissivity is the smallest.The rule of wall temperature distributions differs for different walls.

Key words: MOCVDquartzradiative propertieswall temperatureinfluence

1

Unstrained InAlN/GaN heterostructures grown on sapphire substrates by MOCVD

Bo Liu, Jiayun Yin, Yuanjie Lü, Shaobo Dun, Xiongwen Zhang, et al.

Journal of Semiconductors, 2014, 35(11): 113005. doi: 10.1088/1674-4926/35/11/113005

2

A susceptor with a Λ-shaped slot in a vertical MOCVD reactor by induction heating

Zhiming Li, Hailing Li, Xiaobing Gan, Haiying Jiang, Jinping Li, et al.

Journal of Semiconductors, 2014, 35(9): 092003. doi: 10.1088/1674-4926/35/9/092003

3

Influence of growth time on crystalline structure, conductivity and optical properties of ZnO thin films

Said Benramache, Foued Chabane, Boubaker Benhaoua, Fatima Z. Lemmadi

Journal of Semiconductors, 2013, 34(2): 023001. doi: 10.1088/1674-4926/34/2/023001

4

Microstructural properties of over-doped GaN-based diluted magnetic semiconductors grown by MOCVD

Tao Zhikuo, Zhang Rong, Xiu Xiangqian, Cui Xugao, Li Li, et al.

Journal of Semiconductors, 2012, 33(7): 073002. doi: 10.1088/1674-4926/33/7/073002

5

High quality GaN-based LED epitaxial layers grown in a homemade MOCVD system

Yin Haibo, Wang Xiaoliang, Ran Junxue, Hu Guoxin, Zhang Lu, et al.

Journal of Semiconductors, 2011, 32(3): 033002. doi: 10.1088/1674-4926/32/3/033002

6

Finite element analysis of the temperature field in a vertical MOCVD reactor by induction heating

Li Zhiming, Xu Shengrui, Zhang Jincheng, Chang Yongming, Ni Jingyu, et al.

Journal of Semiconductors, 2009, 30(11): 113004. doi: 10.1088/1674-4926/30/11/113004

7

Optimization and Analysis of Magnesium Doping in MOCVD Grown p-GaN

Zhang Xiaomin, Wang Yanjie, Yang Ziwen, Liao Hui, Chen Weihua, et al.

Journal of Semiconductors, 2008, 29(8): 1475-1478.

8

Growth of High-Quality InP-on-GaAs Quasi-Substrates Using Double Low-Temperature Buffers and Strained Layer Surperlattices by MOCVD

Zhou Jing, Ren Xiaomin, Huang Yongqing, Wang Qi

Journal of Semiconductors, 2008, 29(10): 1855-1859.

9

AIGaN-Based Multi-Type Distributed Bragg Reflectors Grown by MOCVD

Liu Bin, Zhang Rong, Xie Zili, Ji Xiaoli, Li Liang, et al.

Chinese Journal of Semiconductors , 2007, 28(S1): 492-495.

10

Epitaxial Growth of Atomically Flat AlN Layers on Sapphire Substrate by Metal Organic Chemical Vapor Deposition

Zhao Hong, Zou Zeya, Zhao Wenbai, Liu Ting, Yang Xiaobo, et al.

Chinese Journal of Semiconductors , 2007, 28(10): 1568-1573.

11

Simulation of the ZnO-MOCVD Horizontal Reactor Geometry

Liu Songmin, Gu Shulin, Zhu Shunming, Ye Jiandong, Liu Wei, et al.

Chinese Journal of Semiconductors , 2007, 28(S1): 309-311.

12

Numerical Simulation of Gas Phase and Surface Reaction for Growth of GaN by MOCVD

Gao Lihua, Yang Yunke, Chen Haixin, Fu Song

Chinese Journal of Semiconductors , 2007, 28(S1): 245-248.

13

Growth of High AI Content AIGaN Epilayer by MOCVD

Wang Xiaoyan, Wang Xiaoliang, Hu Guoxin, Wang Baozhu, Li Jianping, et al.

Chinese Journal of Semiconductors , 2007, 28(S1): 193-196.

14

Heteroepitaxy of InP/GaAs by MOCVD

Zhou Jing, Wang Qi, Xiong Deping, Cai Shiwei, Huang Hui, et al.

Chinese Journal of Semiconductors , 2007, 28(S1): 190-192.

15

Growth and Characterization of m Plane GaN Material by MOCVD

Xie Zili, Zhang Rong, Han Ping, Liu Chengxiang, Xiu XiangQian, et al.

Chinese Journal of Semiconductors , 2007, 28(S1): 249-252.

16

Wall Temperature Simulation of a Radial Flow MOCVD Reactor with Three-Separate Vertical Inlets

Nie Yuhong, Liu Yong, Yao Shouguang

Chinese Journal of Semiconductors , 2007, 28(1): 127-130.

17

Growth and Optical Properties of ZnO Films and Quantum Wells

Zhang Baoping, Kang Junyong, Yu Jinzhong, Wang Qiming, Segawa Yusaburo, et al.

Chinese Journal of Semiconductors , 2006, 27(4): 613-622.

18

Temperature Distribution in Ridge Structure InGaN Laser Diodes and Its Influence on Device Characteristics

Li Deyao, Huang Yongzhen, Zhang Shuming, Chong Ming, Ye Xiaojun, et al.

Chinese Journal of Semiconductors , 2006, 27(3): 499-505.

19

MOCVD-Grown AlGaN/AlN/GaN HEMT Structure with High Mobility GaN Thin Layer as Channel on SiC

Wang Xiaoliang, Hu Guoxin, Ma Zhiyong, Xiao Hongling, Wang Cuimei, et al.

Chinese Journal of Semiconductors , 2006, 27(9): 1521-1525.

20

Growth of Space Ordered 1.3μm InAs Quantum Dots on GaAs(100) Vicinal Substrates by MOCVD

Liang Song, Zhu Hongliang, Pan Jiaoqing, Wang Wei

Chinese Journal of Semiconductors , 2005, 26(11): 2074-2079.

  • Search

    Advanced Search >>

    GET CITATION

    Liu Yong, Nie Yuhong, Yao Shouguang. Influence of Wall Properties on Wall Temperature of a Radial Flow MOCVD Reactor with Three Separate Vertical Inlets[J]. Journal of Semiconductors, 2007, 28(6): 913-917.
    Liu Y, Nie Y H, Yao S G. Influence of Wall Properties on Wall Temperature of a Radial Flow MOCVD Reactor with Three Separate Vertical Inlets[J]. Chin. J. Semicond., 2007, 28(6): 913.
    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2869 Times PDF downloads: 1063 Times Cited by: 0 Times

    History

    Received: 18 August 2015 Revised: 04 January 2007 Online: Published: 01 June 2007

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Liu Yong, Nie Yuhong, Yao Shouguang. Influence of Wall Properties on Wall Temperature of a Radial Flow MOCVD Reactor with Three Separate Vertical Inlets[J]. Journal of Semiconductors, 2007, 28(6): 913-917. ****Liu Y, Nie Y H, Yao S G. Influence of Wall Properties on Wall Temperature of a Radial Flow MOCVD Reactor with Three Separate Vertical Inlets[J]. Chin. J. Semicond., 2007, 28(6): 913.
      Citation:
      Liu Yong, Nie Yuhong, Yao Shouguang. Influence of Wall Properties on Wall Temperature of a Radial Flow MOCVD Reactor with Three Separate Vertical Inlets[J]. Journal of Semiconductors, 2007, 28(6): 913-917. ****
      Liu Y, Nie Y H, Yao S G. Influence of Wall Properties on Wall Temperature of a Radial Flow MOCVD Reactor with Three Separate Vertical Inlets[J]. Chin. J. Semicond., 2007, 28(6): 913.

      Influence of Wall Properties on Wall Temperature of a Radial Flow MOCVD Reactor with Three Separate Vertical Inlets

      • Received Date: 2015-08-18
      • Accepted Date: 2006-11-23
      • Revised Date: 2007-01-04
      • Published Date: 2007-05-30

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return