Citation: |
Liu Yong, Nie Yuhong, Yao Shouguang. Influence of Wall Properties on Wall Temperature of a Radial Flow MOCVD Reactor with Three Separate Vertical Inlets[J]. Journal of Semiconductors, 2007, 28(6): 913-917.
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Liu Y, Nie Y H, Yao S G. Influence of Wall Properties on Wall Temperature of a Radial Flow MOCVD Reactor with Three Separate Vertical Inlets[J]. Chin. J. Semicond., 2007, 28(6): 913.
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Influence of Wall Properties on Wall Temperature of a Radial Flow MOCVD Reactor with Three Separate Vertical Inlets
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Abstract
Quartz is widely used as the wall of MOCVD reactors.We compared numerical simulations performed by six different models of the quartz emissivity,transmissivity and reflectivity.The models include the transparent-body model,a black body model,a gray body model,a three-band specular reflective model,a three-band diffusive reflective model,and a two-band model.These models are combined with the zone method to simulate wall temperature distribution in the MOCVD reactor with three separate vertical inlets.Results show that the temperature distributions of a quartz wall are largely influenced by the wall properties,in which the wall emissivity is the largest,and the wall transmissivity is the smallest.The rule of wall temperature distributions differs for different walls.-
Keywords:
- MOCVD,
- quartz,
- radiative properties,
- wall temperature,
- influence
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References
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Proportional views