| Citation: |
Hu Shigang, Hao Yue, Ma Xiaohua, Cao Yanrong, Chen Chi, Wu Xiaofeng. Degradation of nMOS and pMOSFETs with Ultrathin Gate Oxide Under DT Stress[J]. Journal of Semiconductors, 2008, 29(11): 2136-2142.
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Hu S G, Hao Y, Ma X H, Cao Y R, Chen C, Wu X F. Degradation of nMOS and pMOSFETs with Ultrathin Gate Oxide Under DT Stress[J]. J. Semicond., 2008, 29(11): 2136.
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Degradation of nMOS and pMOSFETs with Ultrathin Gate Oxide Under DT Stress
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Abstract
The degradation of device parameters and the degradation of the stress induced leakage current (SILC) of thin tunnel gate oxide under constant direct-tunneling voltage stress are studied using nMOS and pMOSFETs with 1.4nm gate oxides.Experimental results show that there is a linear correlation between the degradation of the SILC and the degradation of Vth in MOSFETs during different direct-tunneling (DT) stresses.A model of tunneling assisted by interface traps and oxide trapped positive charges is developed to explain the origin of SILC during DT stress.-
Keywords:
- threshold voltage,
- interface traps,
- direct tunneling,
- SILC
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References
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Proportional views
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