Chin. J. Semicond. > 1988, Volume 9 > Issue 6 > 563-569

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InGaAs-GaAs应变量子阱的光学性质

徐仲英 , 许继宗 , 葛惟锟 , 郑宝真 , T.G.Andersson and Z.G.Chen

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    Received: 19 August 2015 Revised: Online: Published: 01 June 1988

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      Article Navigation >  Journal of Semiconductors  > 1988  >  9(6): 563-569
      徐仲英, 许继宗, 葛惟锟, 郑宝真, T.G.Andersson, Z.G.Chen. InGaAs-GaAs应变量子阱的光学性质[J]. 半导体学报(英文版), 1988, 9(6): 563-569.
      Citation:
      徐仲英, 许继宗, 葛惟锟, 郑宝真, T.G.Andersson, Z.G.Chen. InGaAs-GaAs应变量子阱的光学性质[J]. 半导体学报(英文版), 1988, 9(6): 563-569.
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      • Received Date: 2015-08-19

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