Chin. J. Semicond. > 2003, Volume 24 > Issue 6 > 622-625
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在薄硅外延片上制备高频肖特基势垒二极管

张海燕 , 叶志镇 , 黄靖云 , 李蓓 , 谢靓红 and 赵炳辉

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Key words: 肖特基势垒, 二极管, 硅外延层, 截止频率

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    Received: 20 August 2015 Revised: Online: Published: 01 June 2003

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      Article Navigation >  Journal of Semiconductors  > 2003  >  24(6): 622-625
      张海燕, 叶志镇, 黄靖云, 李蓓, 谢靓红, 赵炳辉. 在薄硅外延片上制备高频肖特基势垒二极管[J]. 半导体学报(英文版), 2003, 24(6): 622-625.
      Citation:
      张海燕, 叶志镇, 黄靖云, 李蓓, 谢靓红, 赵炳辉. 在薄硅外延片上制备高频肖特基势垒二极管[J]. 半导体学报(英文版), 2003, 24(6): 622-625.
      shu

      • Received Date: 2015-08-20

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