Citation: |
郭长志, 刘要武. InGaAsP半导体激光器中能带结构对俄歇复合的影响及其对T_0的贡献[J]. 半导体学报(英文版), 1986, 7(2): 154-163.
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Received: 20 August 2015 Revised: Online: Published: 01 February 1986
Citation: |
郭长志, 刘要武. InGaAsP半导体激光器中能带结构对俄歇复合的影响及其对T_0的贡献[J]. 半导体学报(英文版), 1986, 7(2): 154-163.
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