PAPERS
Ma Ziwen, Tang Zirong, Liao Guanglan, Shi Tielin, Nie Lei and Zhou Ping
Abstract: The three dimensional temperature distribution of laser bonding with a Gaussian thermal source is modeled using the finite element method.In the model,the temperature distribution with different process parameters is simulated and the bondline width is obtained.Then the key process parameters of laser bonding,including laser power,scanning velocity,and initial temperature,are obtained with the help of scanning experiments.Finally,with regression analysis on the simulation results,a regression model is made and the optimal process parameters of laser bonding are found.This can provide a theoretical basis for further study on laser bonding.
Key words: laser bonding, finite element method, regression analysis, bondline width
| 1 |
B. Shougaijam, R. Swain, C. Ngangbam, T.R. Lenka Journal of Semiconductors, 2017, 38(5): 053001. doi: 10.1088/1674-4926/38/5/053001 |
| 2 |
Performance analysis of SiGe double-gate N-MOSFET A. Singh, D. Kapoor, R. Sharma Journal of Semiconductors, 2017, 38(4): 044003. doi: 10.1088/1674-4926/38/4/044003 |
| 3 |
Performance analysis of charge plasma based dual electrode tunnel FET Sunny Anand, S. Intekhab Amin, R. K. Sarin Journal of Semiconductors, 2016, 37(5): 054003. doi: 10.1088/1674-4926/37/5/054003 |
| 4 |
FDTD technique based crosstalk analysis of bundled SWCNT interconnects Yograj Singh Duksh, Brajesh Kumar Kaushik, Rajendra P. Agarwal Journal of Semiconductors, 2015, 36(5): 055002. doi: 10.1088/1674-4926/36/5/055002 |
| 5 |
S. Theodore Chandra, N. B. Balamurugan, M. Bhuvaneswari, N. Anbuselvan, N. Mohankumar, et al. Journal of Semiconductors, 2015, 36(6): 064003. doi: 10.1088/1674-4926/36/6/064003 |
| 6 |
Finite element simulation of hydrostatic stress in copper interconnects Yuan Guangjie, Chen Leng Journal of Semiconductors, 2011, 32(5): 055011. doi: 10.1088/1674-4926/32/5/055011 |
| 7 |
Design and noise analysis of a sigma–delta capacitive micromachined accelerometer Liu Yuntao, Liu Xiaowei, Chen Weiping, Wu Qun Journal of Semiconductors, 2010, 31(5): 055006. doi: 10.1088/1674-4926/31/5/055006 |
| 8 |
Sigma–delta modulator modeling analysis and design Ge Binjie, Wang Xin'an, Zhang Xing, Feng Xiaoxing, Wang Qingqin, et al. Journal of Semiconductors, 2010, 31(9): 095003. doi: 10.1088/1674-4926/31/9/095003 |
| 9 |
Performance analysis of solar cell arrays in concentrating light intensity Xu Yongfeng, Li Ming, Wang Liuling, Lin Wenxian, Xiang Ming, et al. Journal of Semiconductors, 2009, 30(8): 084011. doi: 10.1088/1674-4926/30/8/084011 |
| 10 |
Numerical analysis of four-wave-mixing based multichannel wavelength conversion techniques in fibers Jia Liang, Zhang Fan, Li Ming, Liu Yuliang, Chen Zhangyuan, et al. Journal of Semiconductors, 2009, 30(5): 054007. doi: 10.1088/1674-4926/30/5/054007 |
| 11 |
Thermal analysis and test for single concentrator solar cells Cui Min, Chen Nuofu, Yang Xiaoli, Wang Yu, Bai Yiming, et al. Journal of Semiconductors, 2009, 30(4): 044011. doi: 10.1088/1674-4926/30/4/044011 |
| 12 |
Finite element analysis of the temperature field in a vertical MOCVD reactor by induction heating Li Zhiming, Xu Shengrui, Zhang Jincheng, Chang Yongming, Ni Jingyu, et al. Journal of Semiconductors, 2009, 30(11): 113004. doi: 10.1088/1674-4926/30/11/113004 |
| 13 |
Design and Mechanical Characteristics of Novel MEMS Microneedles Sun Xiao, Jia Shuhai, Zhu Jun, Li Yigui Chinese Journal of Semiconductors , 2007, 28(1): 113-116. |
| 14 |
Pressure-Free Localized Laser Bonding for Silicon and Glass Ma Ziwen, Tang Zirong, Liao Guanglan, Shi Tielin, Nie Lei, et al. Chinese Journal of Semiconductors , 2007, 28(2): 217-221. |
| 15 |
Equivalent Circuit Analysis of an RF Integrated Inductor with Ferrite Thin-Film Ren Tianling, Yang Chen, Liu Feng, Liu Litian, Wang A Z, et al. Chinese Journal of Semiconductors , 2006, 27(3): 511-515. |
| 16 |
Single Mode Operation of Short-Cavity Quantum Cascade Lasers Liu Fengqi, Guo Yu, Li Lu, Shao Ye, Liu Junqi, et al. Chinese Journal of Semiconductors , 2006, 27(4): 679-682. |
| 17 |
Analysis of Si/GaAs Bonding Stresses with the FiniteElement Method He Guorong, Yang Guohua, Zheng Wanhua, Wu Xuming, Wang Xiaodong, et al. Chinese Journal of Semiconductors , 2006, 27(11): 1906-1910. |
| 18 |
Analysis on Characteristic of Static Induction Transistor Using Mirror Method Hu Dongqing, Li Siyuan，and Wang Yongshun Chinese Journal of Semiconductors , 2005, 26(2): 258-265. |
| 19 |
Noise Analysis of Analog Correlator Tu Chunjiang, Liu Bo’an，and Chen Hongyi Chinese Journal of Semiconductors , 2005, 26(3): 480-486. |
| 20 |
Effect of DBR Geometry on Reflectivity and Spectral Linewidth of DBR Lasers Fang Dawei, Zhang Yi, Li Chenxia, Manzaneda C, Li Bo, et al. Chinese Journal of Semiconductors , 2005, 26(12): 2315-2319. |
Article views: 2907 Times PDF downloads: 4891 Times Cited by: 0 Times
Received: 18 August 2015 Revised: 15 December 2006 Online: Published: 01 June 2007
| Citation: |
Ma Ziwen, Tang Zirong, Liao Guanglan, Shi Tielin, Nie Lei, Zhou Ping. Finite Element Simulation and Process Optimization of Localized Laser Bonding[J]. Journal of Semiconductors, 2007, 28(6): 995-1000.
****
Ma Z W, Tang Z R, Liao G L, Shi T L, Nie L, Zhou P. Finite Element Simulation and Process Optimization of Localized Laser Bonding[J]. Chin. J. Semicond., 2007, 28(6): 995.
|
WeChat ID
Journal of Semiconductors © 2017 All Rights Reserved 京ICP备05085259号-2
DownLoad: