Citation: |
Lin Tao, Jiang Li, Wang Jun, Tan Manqing, Liu Suping, Wei Xin, Wang Guohong, Ma Xiaoyu. Fabrication of High Power 670nm Laser Diodes[J]. Journal of Semiconductors, 2005, 26(S1): 176-179.
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Lin T, Jiang L, Wang J, Tan M Q, Liu S P, Wei X, Wang G H, Ma X Y. Fabrication of High Power 670nm Laser Diodes[J]. Chin. J. Semicond., 2005, 26(13): 176.
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Fabrication of High Power 670nm Laser Diodes
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Abstract
670nm laser diode wafer is grown by low pressure MOCVD technology.Well of the active region is InGaAsP and barrier is AlGaInP.The so grown wafer is processed into 670nm high power oxide striped laser diodes with non current injected windows structure near the facets.Cavity length of the LD is 900μm and current injection width is 100μm.Both the non-current injected windows are 25μm long.After coated,the typical threshold current is 0.4A,output wavelength is 670±2nm and the maximum output power is 1100mW.Far field divergence angles in the junction-parallel and perpendicular directions are 8°and 40° respectively.These results show that the device structure can improve maximum output power.-
Keywords:
- 670nm,
- laser diodes,
- MOCVD,
- COD
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References
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Proportional views