Chin. J. Semicond. > 1995, Volume 16 > Issue 3 > 206-211
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硅膜厚度和背栅对SIMOX／SOI薄膜全耗尽MOSFET特性影响的研究

魏丽琼，程玉华，孙玉秀，阎桂珍，李映雪，武国英，王阳元

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    Received: 19 August 2015 Revised: Online: Published: 01 March 1995

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      Article Navigation >  Journal of Semiconductors  > 1995  >  16(3): 206-211
      魏丽琼，程玉华，孙玉秀，阎桂珍，李映雪，武国英，王阳元. 硅膜厚度和背栅对SIMOX／SOI薄膜全耗尽MOSFET特性影响的研究[J]. 半导体学报(英文版), 1995, 16(3): 206-211.
      Citation:
      魏丽琼，程玉华，孙玉秀，阎桂珍，李映雪，武国英，王阳元. 硅膜厚度和背栅对SIMOX／SOI薄膜全耗尽MOSFET特性影响的研究[J]. 半导体学报(英文版), 1995, 16(3): 206-211.
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      • Received Date: 2015-08-19

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