Chin. J. Semicond. > 2002, Volume 23 > Issue 6 > 668-672

CONTENTS

用于MEMS的选择性形成多孔硅技术的研究

谢克文 , 王晓红 , 陈兢 and 刘理天

+ Author Affiliations

PDF

Key words: 多孔硅, 扩散, 牺牲层

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2381 Times PDF downloads: 1172 Times Cited by: 0 Times

    History

    Received: 19 August 2015 Revised: Online: Published: 01 June 2002

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2002  >  23(6): 668-672
      谢克文, 王晓红, 陈兢, 刘理天. 用于MEMS的选择性形成多孔硅技术的研究[J]. 半导体学报(英文版), 2002, 23(6): 668-672.
      Citation:
      谢克文, 王晓红, 陈兢, 刘理天. 用于MEMS的选择性形成多孔硅技术的研究[J]. 半导体学报(英文版), 2002, 23(6): 668-672.
      shu

      • Received Date: 2015-08-19

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return