Chin. J. Semicond. > 2000, Volume 21 > Issue 3 > 245-249
|

CONTENTS

半导体CdS簇合物的制备及性能

张敬波 , 林原 and 肖绪瑞

+ Author Affiliations

PDF

Key words: 簇合物, CdS, 制备, 性能

    • Search

    Advanced Search >>

    GET CITATION

    于春利, 郝跃, 杨林安. 包含衬底电流的LDD MOSFET输出I-V特性的经验模型分析(英文)[J]. 半导体学报(英文版), 2004, 25(7): 778-783.
    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2051 Times PDF downloads: 964 Times Cited by: 0 Times

    History

    Received: 20 August 2015 Revised: Online: Published: 01 March 2000

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2000  >  21(3): 245-249
      于春利, 郝跃, 杨林安. 包含衬底电流的LDD MOSFET输出I-V特性的经验模型分析(英文)[J]. 半导体学报(英文版), 2004, 25(7): 778-783.
      Citation:
      张敬波, 林原, 肖绪瑞. 半导体CdS簇合物的制备及性能[J]. 半导体学报(英文版), 2000, 21(3): 245-249.
      shu

      • Received Date: 2015-08-20

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return