Citation: |
Chen Yuanyuan, Yu Jinzhong, Yan Qingfeng, Chen Shaowu. Analysis on Influencing Factors of Bend Loss of Silicon-on-Insulator Waveguides[J]. Journal of Semiconductors, 2005, 26(S1): 216-219.
****
Chen Y Y, Yu J Z, Yan Q F, Chen S W. Analysis on Influencing Factors of Bend Loss of Silicon-on-Insulator Waveguides[J]. Chin. J. Semicond., 2005, 26(13): 216.
|
Analysis on Influencing Factors of Bend Loss of Silicon-on-Insulator Waveguides
-
Abstract
The influencing factors of bend loss of silicon-on-insulator (SOI) bend waveguides are analyzed by means of effective index method (EIM) and two dimensional beam propagation method (2D-BPM).The modeling results indicate that the bend loss decreases with the increase of bend radii and waveguide width,as well as with the decrease of the etching ratio of the rib waveguide.Meanwhile,improvement of the rib waveguide structure,such as constructing the SOI waveguide with asymmetric rib structure,or etching groove in outside of bend waveguide,will contribute to lower the bend loss of SOI bend waveguides.-
Keywords:
- silicon-on-insulator,
- bend waveguide,
- bend loss,
- integrated optics
-
References
-
Proportional views