Chin. J. Semicond. > 1995, Volume 16 > Issue 2 > 113-117
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用脉冲腐蚀制备发光多孔硅

范洪雷，侯晓远，李喆深，张甫龙，俞鸣人，王迅

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    Received: 19 August 2015 Revised: Online: Published: 01 February 1995

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      Article Navigation >  Journal of Semiconductors  > 1995  >  16(2): 113-117
      范洪雷，侯晓远，李喆深，张甫龙，俞鸣人，王迅. 用脉冲腐蚀制备发光多孔硅[J]. 半导体学报(英文版), 1995, 16(2): 113-117.
      Citation:
      范洪雷，侯晓远，李喆深，张甫龙，俞鸣人，王迅. 用脉冲腐蚀制备发光多孔硅[J]. 半导体学报(英文版), 1995, 16(2): 113-117.
      shu

      • Received Date: 2015-08-19

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