| Citation: |
Qin Lixia, Xue Chengshan, Zhuang Huizhao, Yang Zhaozhu, Chen Jinhua, Li Hong. Synthesis and Characterization of GaN Nanorods by Ammoniating Ga2O3/Co Films Deposited on Si(111) Substrates[J]. Journal of Semiconductors, 2008, 29(2): 210-213.
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Qin L X, Xue C S, Zhuang H Z, Yang Z Z, Chen J H, Li H. Synthesis and Characterization of GaN Nanorods by Ammoniating Ga2O3/Co Films Deposited on Si(111) Substrates[J]. J. Semicond., 2008, 29(2): 210.
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Synthesis and Characterization of GaN Nanorods by Ammoniating Ga2O3/Co Films Deposited on Si(111) Substrates
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Abstract
GaN nanorods are successfully synthesized on Si(111) substrates with magnetron sputtering through ammoniating Ga2O3/Co films at 950℃.X-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, and Fourier-transform infrared spectroscopy are used to characterize the samples.The results demonstrate that the nanorods are single-crystal GaN with a hexagonal wurtzite structure and possess relatively smooth surfaces.The growth mechanism of GaN nanorods is also discussed. -
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