Chin. J. Semicond. > 1998, Volume 19 > Issue 5 > 369-373
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nMOSFET’s界面对热空穴俘获率的研究

张炯 , 吴正立 and 李瑞伟

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    Received: 18 August 2015 Revised: Online: Published: 01 May 1998

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      Article Navigation >  Journal of Semiconductors  > 1998  >  19(5): 369-373
      张炯, 吴正立, 李瑞伟. nMOSFET’s界面对热空穴俘获率的研究[J]. 半导体学报(英文版), 1998, 19(5): 369-373.
      Citation:
      张炯, 吴正立, 李瑞伟. nMOSFET’s界面对热空穴俘获率的研究[J]. 半导体学报(英文版), 1998, 19(5): 369-373.
      shu

      • Received Date: 2015-08-18

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