| Citation: |
Yu Xiaodong, Han Jun, Li Jianjun, Deng Jun, Lin Weizhi, Da Xiaoli, Chen Yixin, Shen Guangdi. High Brightness AlGaInP LED with Coupled Distributed Bragg Reflector[J]. Journal of Semiconductors, 2007, 28(1): 100-103.
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Yu X D, Han J, Li J J, Deng J, Lin W Z, Da X L, Chen Y X, Shen G D. High Brightness AlGaInP LED with Coupled Distributed Bragg Reflector[J]. Chin. J. Semicond., 2007, 28(1): 100.
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High Brightness AlGaInP LED with Coupled Distributed Bragg Reflector
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Abstract
An Al0.6Ga0.4As/AlAs distributed Bragg reflector (DBR) for a 630nm peak wavelength high brightness AlGaInP LED is studied.The reflective characteristics of normal DBR and coupled DBR are simulated using the interference matrix model.The simulated DBR structures and corresponding LEDs are grown by LP-MOCVD.The simulated and experimental results both indicate that the coupled DBR can remarkably increase the light extraction efficiency of an AlGaInP LED.The non-encapsulated LED with the coupled DBR performs well,with 2.3mW output optical power,12 lm/W luminous efficiency,and 5.6% external quantum efficiency,with an improvement of 35% over that with a normal DBR.-
Keywords:
- red LED,
- coupled DBR,
- MOCVD,
- light extraction efficiency
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References
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