Chin. J. Semicond. > 1993, Volume 14 > Issue 3 > 133-138

CONTENTS

MBE-GaAs/Si材料应变层的调制光谱研究

胡雨生 , 胡福义 , 汪乐 , 李爱珍 and 范伟栋

+ Author Affiliations

PDF

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2390 Times PDF downloads: 740 Times Cited by: 0 Times

    History

    Received: 20 August 2015 Revised: Online: Published: 01 March 1993

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 1993  >  14(3): 133-138
      胡雨生, 胡福义, 汪乐, 李爱珍, 范伟栋. MBE-GaAs/Si材料应变层的调制光谱研究[J]. 半导体学报(英文版), 1993, 14(3): 133-138.
      Citation:
      胡雨生, 胡福义, 汪乐, 李爱珍, 范伟栋. MBE-GaAs/Si材料应变层的调制光谱研究[J]. 半导体学报(英文版), 1993, 14(3): 133-138.
      shu

      • Received Date: 2015-08-20

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return