Chin. J. Semicond. > 2002, Volume 23 > Issue 12 > 1286-1290
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微氮硅单晶中的空洞型原生缺陷

余学功 , 杨德仁 , 马向阳 , 李立本 and 阙端麟

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Key words: 直拉硅, 掺氮, 空洞型缺陷

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    陈小华，彭景翠，颜永红. 聚丁二炔晶体中光电导的电场依赖性[J]. 半导体学报(英文版), 1996, 17(10): 748-752.
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    Received: 19 August 2015 Revised: Online: Published: 01 December 2002

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      Article Navigation >  Journal of Semiconductors  > 2002  >  23(12): 1286-1290
      余学功, 杨德仁, 马向阳, 李立本, 阙端麟. 微氮硅单晶中的空洞型原生缺陷[J]. 半导体学报(英文版), 2002, 23(12): 1286-1290.
      Citation:
      余学功, 杨德仁, 马向阳, 李立本, 阙端麟. 微氮硅单晶中的空洞型原生缺陷[J]. 半导体学报(英文版), 2002, 23(12): 1286-1290.
      shu

      • Received Date: 2015-08-19

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