Chin. J. Semicond. > 2001, Volume 22 > Issue 12 > 1529-1533
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LPCVD制备纳米硅镶嵌结构氮化硅膜及其内应力

陈大鹏 , 叶甜春 , 谢常青 , 李兵 , 赵玲莉 , 韩敬东 and 胥兴才

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Key words: SiNx膜, 硅镶嵌微结构, 内应力, LPCVD, 镶嵌复合膜

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    Received: 20 August 2015 Revised: Online: Published: 01 December 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(12): 1529-1533
      陈大鹏, 叶甜春, 谢常青, 李兵, 赵玲莉, 韩敬东, 胥兴才. LPCVD制备纳米硅镶嵌结构氮化硅膜及其内应力[J]. 半导体学报(英文版), 2001, 22(12): 1529-1533.
      Citation:
      陈大鹏, 叶甜春, 谢常青, 李兵, 赵玲莉, 韩敬东, 胥兴才. LPCVD制备纳米硅镶嵌结构氮化硅膜及其内应力[J]. 半导体学报(英文版), 2001, 22(12): 1529-1533.
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      • Received Date: 2015-08-20

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