Chin. J. Semicond. > 2000, Volume 21 > Issue 4 > 388-393
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GAT双极晶体管的高频高压兼容特性

庄宝煌 , 黄美纯 , 朱梓忠 , 李开航 and 吴丽清

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Key words: 高频高压特性, GAT, 模型

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    Received: 20 August 2015 Revised: Online: Published: 01 April 2000

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      Article Navigation >  Journal of Semiconductors  > 2000  >  21(4): 388-393
      庄宝煌, 黄美纯, 朱梓忠, 李开航, 吴丽清. GAT双极晶体管的高频高压兼容特性[J]. 半导体学报(英文版), 2000, 21(4): 388-393.
      Citation:
      庄宝煌, 黄美纯, 朱梓忠, 李开航, 吴丽清. GAT双极晶体管的高频高压兼容特性[J]. 半导体学报(英文版), 2000, 21(4): 388-393.
      shu

      • Received Date: 2015-08-20

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