Chin. J. Semicond. > 1984, Volume 5 > Issue 4 > 380-387
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GaAs体效应器件中阴极深凹槽掺杂分布引起静止畴的超宽带负阻

郑一阳 and 张进昌

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    Received: 20 August 2015 Revised: Online: Published: 01 April 1984

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      Article Navigation >  Journal of Semiconductors  > 1984  >  5(4): 380-387
      郑一阳, 张进昌. GaAs体效应器件中阴极深凹槽掺杂分布引起静止畴的超宽带负阻[J]. 半导体学报(英文版), 1984, 5(4): 380-387.
      Citation:
      郑一阳, 张进昌. GaAs体效应器件中阴极深凹槽掺杂分布引起静止畴的超宽带负阻[J]. 半导体学报(英文版), 1984, 5(4): 380-387.
      shu

      • Received Date: 2015-08-20

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