Chin. J. Semicond. > 2003, Volume 24 > Issue 3 > 238-244
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热载流子应力下超薄栅p MOS器件氧化层陷阱电荷的表征(英文)

杨国勇 , 王金延 , 霍宗亮 , 毛凌锋 , 谭长华 and 许铭真

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Key words: MOS结构, 氧化层陷阱, 热载流子退化

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    Received: 20 August 2015 Revised: Online: Published: 01 March 2003

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      Article Navigation >  Journal of Semiconductors  > 2003  >  24(3): 238-244
      杨国勇, 王金延, 霍宗亮, 毛凌锋, 谭长华, 许铭真. 热载流子应力下超薄栅p MOS器件氧化层陷阱电荷的表征(英文)[J]. 半导体学报(英文版), 2003, 24(3): 238-244.
      Citation:
      杨国勇, 王金延, 霍宗亮, 毛凌锋, 谭长华, 许铭真. 热载流子应力下超薄栅p MOS器件氧化层陷阱电荷的表征(英文)[J]. 半导体学报(英文版), 2003, 24(3): 238-244.
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      • Received Date: 2015-08-20

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