Chin. J. Semicond. > 1998, Volume 19 > Issue 12 > 886-889
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γ-Al_2O_3/Si(100)薄膜高真空MOCVD异质外延生长

昝育德 , 王俊 , 韩秀峰 , 王玉田 , 王维民 , 王占国 and 林兰英

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    Received: 18 August 2015 Revised: Online: Published: 01 December 1998

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      Article Navigation >  Journal of Semiconductors  > 1998  >  19(12): 886-889
      昝育德, 王俊, 韩秀峰, 王玉田, 王维民, 王占国, 林兰英. γ-Al_2O_3/Si(100)薄膜高真空MOCVD异质外延生长[J]. 半导体学报(英文版), 1998, 19(12): 886-889.
      Citation:
      昝育德, 王俊, 韩秀峰, 王玉田, 王维民, 王占国, 林兰英. γ-Al_2O_3/Si(100)薄膜高真空MOCVD异质外延生长[J]. 半导体学报(英文版), 1998, 19(12): 886-889.
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      • Received Date: 2015-08-18

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