Chin. J. Semicond. > 1986, Volume 7 > Issue 1 > 65-72
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用低能电子衍射研究小面结构——在Ⅲ-Ⅴ族化合物半导体表面的应用

陈平 , 侯晓远 , 丁训民 , 董国胜 , 杨曙 and 王迅

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    Received: 20 August 2015 Revised: Online: Published: 01 January 1986

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      Article Navigation >  Journal of Semiconductors  > 1986  >  7(1): 65-72
      陈平, 侯晓远, 丁训民, 董国胜, 杨曙, 王迅. 用低能电子衍射研究小面结构——在Ⅲ-Ⅴ族化合物半导体表面的应用[J]. 半导体学报(英文版), 1986, 7(1): 65-72.
      Citation:
      陈平, 侯晓远, 丁训民, 董国胜, 杨曙, 王迅. 用低能电子衍射研究小面结构——在Ⅲ-Ⅴ族化合物半导体表面的应用[J]. 半导体学报(英文版), 1986, 7(1): 65-72.
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      • Received Date: 2015-08-20

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