Chin. J. Semicond. > 1981, Volume 2 > Issue 1 > 45-54
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具有PTF>1及均匀载流子漂移速度的硅雪崩二极管的理论分析

唐惟琅

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    Received: 20 August 2015 Revised: Online: Published: 01 January 1981

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      Article Navigation >  Journal of Semiconductors  > 1981  >  2(1): 45-54
      唐惟琅. 具有PTF>1及均匀载流子漂移速度的硅雪崩二极管的理论分析[J]. 半导体学报(英文版), 1981, 2(1): 45-54.
      Citation:
      唐惟琅. 具有PTF>1及均匀载流子漂移速度的硅雪崩二极管的理论分析[J]. 半导体学报(英文版), 1981, 2(1): 45-54.
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      • Received Date: 2015-08-20

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