Chin. J. Semicond. > 1998, Volume 19 > Issue 9 > 656-660
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在GaSb衬底上生长c-GaN的初步研究

黄大定 , 高维滨 , 吴正龙 , 张建辉 and 刘志凯

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    Received: 18 August 2015 Revised: Online: Published: 01 September 1998

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      Article Navigation >  Journal of Semiconductors  > 1998  >  19(9): 656-660
      黄大定, 高维滨, 吴正龙, 张建辉, 刘志凯. 在GaSb衬底上生长c-GaN的初步研究[J]. 半导体学报(英文版), 1998, 19(9): 656-660.
      Citation:
      黄大定, 高维滨, 吴正龙, 张建辉, 刘志凯. 在GaSb衬底上生长c-GaN的初步研究[J]. 半导体学报(英文版), 1998, 19(9): 656-660.
      shu

      • Received Date: 2015-08-18

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