Chin. J. Semicond. > 1987, Volume 8 > Issue 4 > 351-355
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Si(331)-6×2表面相及其氧吸附特性

邢益荣

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    Received: 19 August 2015 Revised: Online: Published: 01 April 1987

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      Article Navigation >  Journal of Semiconductors  > 1987  >  8(4): 351-355
      邢益荣. Si(331)-6×2表面相及其氧吸附特性[J]. 半导体学报(英文版), 1987, 8(4): 351-355.
      Citation:
      邢益荣. Si(331)-6×2表面相及其氧吸附特性[J]. 半导体学报(英文版), 1987, 8(4): 351-355.
      shu

      • Received Date: 2015-08-19

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