Hydrodynamic Simulation of Sub 50nm Double Gate MOSFET

Liu Yibo; Liu Enfeng; Liu Xiaoyan; Han Rugi

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Article Navigation > Journal of Semiconductors > 2003 > 24(S1): 144-147

Liu Yibo, Liu Enfeng, Liu Xiaoyan, Han Rugi. Hydrodynamic Simulation of Sub 50nm Double Gate MOSFET[J]. Journal of Semiconductors, 2003, 24(S1): 144-147. ****Liu Y B, Liu E F, Liu X Y, Han R. Hydrodynamic Simulation of Sub 50nm Double Gate MOSFET[J]. Chin. J. Semicond., 2003, 24(S1): 144.

Citation:

Liu Yibo, Liu Enfeng, Liu Xiaoyan, Han Rugi. Hydrodynamic Simulation of Sub 50nm Double Gate MOSFET[J]. Journal of Semiconductors, 2003, 24(S1): 144-147. ****

Liu Y B, Liu E F, Liu X Y, Han R. Hydrodynamic Simulation of Sub 50nm Double Gate MOSFET[J]. Chin. J. Semicond., 2003, 24(S1): 144.

Citation:

Liu Yibo, Liu Enfeng, Liu Xiaoyan, Han Rugi. Hydrodynamic Simulation of Sub 50nm Double Gate MOSFET[J]. Journal of Semiconductors, 2003, 24(S1): 144-147. ****

Liu Y B, Liu E F, Liu X Y, Han R. Hydrodynamic Simulation of Sub 50nm Double Gate MOSFET[J]. Chin. J. Semicond., 2003, 24(S1): 144.

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Hydrodynamic Simulation of Sub 50nm Double Gate MOSFET

Institute of Microelectronics, Peking University, Beijing 100871, China,Institute of Microelectronics, Peking University, Beijing 100871, China,Institute of Microelectronics, Peking University, Beijing 100871, China and Institute of Microelectronics, Peking University, Beijing 100871, China

Received Date: 2016-03-16
Published Date: 2016-03-15

Abstract

Abstract

The performance of sub 50nm double gate MOSFET with different channel-length is simulated by the hydrodynamic simulation software developed. The distribution of electron temperature and drift velocity is compared in the channel direction. The short channel effect is also analyzed.
- hydrodynamic,
- double gate MOSFET,
- threshold vo1tage,
- short channel effect,
- electron temperature,
- velocity

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