Chin. J. Semicond. > 1981, Volume 2 > Issue 3 > 240-242
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用热激电流法测定硅-二氧化硅的界面态

盛篪

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    Received: 20 August 2015 Revised: Online: Published: 01 March 1981

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      Article Navigation >  Journal of Semiconductors  > 1981  >  2(3): 240-242
      盛篪. 用热激电流法测定硅-二氧化硅的界面态[J]. 半导体学报(英文版), 1981, 2(3): 240-242.
      Citation:
      盛篪. 用热激电流法测定硅-二氧化硅的界面态[J]. 半导体学报(英文版), 1981, 2(3): 240-242.
      shu

      • Received Date: 2015-08-20

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