Chin. J. Semicond. > 2005, Volume 26 > Issue 1 > 158-162
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衬底驱动MOSFET特性分析及超低压运算放大器设计

尹韬, 朱樟明, 杨银堂 and 郭磊

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Abstract: 讨论分析了衬底驱动MOSFET的工作原理、频率特性和噪声特性，并对其低压特性进行了分析和仿真．基于PMOS衬底驱动技术，设计实现了超低压运算放大器．在0.8V电源电压下，运算放大器的直流开环增益为74dB，相位裕度为66°，失调电压为940μV，输出电压范围为110～798mV．

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    Received: 19 August 2015 Revised: Online: Published: 01 January 2005

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      Article Navigation >  Journal of Semiconductors  > 2005  >  26(1): 158-162
      尹韬, 朱樟明, 杨银堂, 郭磊. 衬底驱动MOSFET特性分析及超低压运算放大器设计[J]. Journal of Semiconductors, 2005, 26(1): 158-162. ****尹韬, 朱樟明, 杨银堂, 郭磊, 衬底驱动MOSFET特性分析及超低压运算放大器设计[J]. Journal of Semiconductors, 2005, 26(1), 158-162
      Citation:
      尹韬, 朱樟明, 杨银堂, 郭磊. 衬底驱动MOSFET特性分析及超低压运算放大器设计[J]. Journal of Semiconductors, 2005, 26(1): 158-162. ****
      尹韬, 朱樟明, 杨银堂, 郭磊, 衬底驱动MOSFET特性分析及超低压运算放大器设计[J]. Journal of Semiconductors, 2005, 26(1), 158-162
      shu

      衬底驱动MOSFET特性分析及超低压运算放大器设计

      • Received Date: 2015-08-19

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